Автор туралы ақпарат
Калюжный, Н. А.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 69, № 4 (2024) | ПОВЕРХНОСТЬ, ТОНКИЕ ПЛЕНКИ | Morphology and spatial distribution of ordered domains in GaInP/GaAs(001) according to transmission electron microscopy | |
| Том 69, № 4 (2024) | ПРИБОРЫ, АППАРАТУРА | Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption |