Мақаланы E-mail арқылы жіберу Electron spin resonance impact on the longitudinal resistance in the quantum Hall regime
- Авторлар: Bisti V.E.1
-
Мекемелер:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Шығарылым: Том 88, № 2 (2024)
- Беттер: 207-210
- Бөлім: New Materials and Technologies for Security Systems
- URL: https://kld-journal.fedlab.ru/0367-6765/article/view/654751
- DOI: https://doi.org/10.31857/S0367676524020075
- EDN: https://elibrary.ru/RTIOZX
- ID: 654751
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Аннотация
The electron spin resonance impact on the longitudinal resistance in the quantum Hall regime near the integer filling factors is considered. For the odd filling factors extra spin excitons are created in the process of the microwave absorption, and the resistance increase due to the effective temperature rise. For the even filling factors in the absorption process depending on the temperature inspired spin polarization leads to transition of the spin-flip excitations to the higher energy short-lived excitations, and as a result the resistance is decreased due to effective temperature decrease.
Негізгі сөздер
Толық мәтін
Авторлар туралы
V. Bisti
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: bisti@issp.ac.ru
Ресей, Chernogolovka
Әдебиет тізімі
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