Author Details
Здоровейщев, А. В.
| Issue | Section | Title | File |
| Vol 53, No 3 (2024) | ПРИБОРЫ | Development of the Ge-MDST instrument structure with an induced p-type channel |
User
Information
Subscription
Login to verify subscription
Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
×
User
Information
Subscription
Login to verify subscription
Keywords
Förster effect
bipolar transistor
charge qubit
dissociation
etching
fluorocarbon gases
gas temperature
ionization
kinetics
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power