Direct One-Stage Plasma Chemical Synthesis of Nanostructured Thin Films of the System β-Ga2O3-GaN of Different Composition

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Resumo

For the first time, nanostructured thin films of the β-Ga2O3−GaN system were obtained by plasma chemical deposition from the gas phase (PECVD) on c-sapphire substrates. High-purity metallic gallium, as well as high-purity gaseous nitrogen and oxygen were used as sources of macro components. The low-temperature nonequilibrium plasma of an inductively coupled HF (40.68 MHz) discharge at a reduced pressure (0.01 Torr) was the initiator of chemical transformations between the starting substances. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma chemical process was studied using the optical emission spectroscopy (OES) method. The obtained thin films of the β-Ga2O3−GaN system with a GaN phase content of 2 to 7% were characterized by various analytical methods.

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Sobre autores

L. Mochalov

Lobachevsky Nizhny Novgorod State University

Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

M. Kudryashova

Lobachevsky Nizhny Novgorod State University

Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

M. Vshivtsev

Lobachevsky Nizhny Novgorod State University

Autor responsável pela correspondência
Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

Yu. Kudryashov

Lobachevsky Nizhny Novgorod State University

Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

I. Prokhorov

Lobachevsky Nizhny Novgorod State University

Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

A. Knyazev

Lobachevsky Nizhny Novgorod State University

Email: mvshivtcev@mail.ru
Rússia, Nizhny Novgorod

A. Almaev

Focon LLC

Email: mvshivtcev@mail.ru
Rússia, Kaluga

N. Yakovlev

Focon LLC

Email: mvshivtcev@mail.ru
Rússia, Kaluga

E. Chernikov

Focon LLC

Email: mvshivtcev@mail.ru
Rússia, Kaluga

N. Erzakova

Focon LLC

Email: mvshivtcev@mail.ru
Rússia, Kaluga

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2. Fig. 1. Schematic representation of a plasma chemical plant for the synthesis of β-Ga2O3−GaN thin films

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3. Fig. 2. The emission spectrum of the plasma of the Ga-H2-O2-N2 mixture at different nitrogen contents: a – 1%; b – 3%; c – 7%. The inset shows a section of the spectrum in the range of 280-1100 nm

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4. Fig. 3. SEM images of gallium oxide samples doped with gallium nitride. The upper row of the scale is 1 micron, the lower row of the scale is 100 nm

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5. Fig. 4. AFM image of a polycrystalline sample of gallium oxide doped with gallium nitride (β-Ga2O3−95%−GaN−5%)

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6. Fig. 5. Raman spectra of gallium oxide films doped with GaN with different doping concentrations

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