Enviar artigo por via de e-mail Structure of aluminum films for creating tunnel junctions.
- Autores: Strelkov M.V.1,2, Chekushkin A.M.1, Lomov A.A.3, Kraevsky S.V.4, Fominskii M.Y.1, Tarasov M.A.1
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Afiliações:
- Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (National Research University)
- Valiev Institute of Physics and Technology Russian Academy of Sciences
- Scientific-Research Institute of Biomedical Chemistry named after V.N. Orekhovich
- Edição: Volume 68, Nº 10 (2023)
- Páginas: 998-1002
- Seção: ЭЛЕКТРОНИКА СВЧ
- URL: https://kld-journal.fedlab.ru/0033-8494/article/view/650459
- DOI: https://doi.org/10.31857/S0033849423100157
- EDN: https://elibrary.ru/YZIYOK
- ID: 650459
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Resumo
A series of studies of the structure of aluminum films deposited on single-crystal
silicon substrates in different temperature conditions. The roughness and grain size of films of nuclei 20 nm thick, deposited at elevated temperatures, and also dusted on top of the seed layer at room temperature to a thickness of 150 nm. The film profile was measured in an electron microscope. It was found that films on the hot sublayer turn out to be smoother, more rigid (less loose) and allow one to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions, respectively, with a higher current density and lower capacitance.
Sobre autores
M. Strelkov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (National Research University)
Email: strelkov.mv@phystech.edu
Moscow, 125009 Russia; Dolgoprudnyi, Moscow oblast, 141701 Russia
A. Chekushkin
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: strelkov.mv@phystech.edu
Moscow, 125009 Russia
A. Lomov
Valiev Institute of Physics and Technology Russian Academy of Sciences
Email: strelkov.mv@phystech.edu
Moscow, 117218 Russia
S. Kraevsky
Scientific-Research Institute of Biomedical Chemistry named after V.N. Orekhovich
Email: strelkov.mv@phystech.edu
Moscow, 119121, Russia
M. Fominskii
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: strelkov.mv@phystech.edu
Moscow, 125009 Russia
M. Tarasov
Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: strelkov.mv@phystech.edu
Moscow, 125009 Russia
Bibliografia
- Rodionov I., Baburin A., Gabidullin A., et al. // Sci. Rep. 2019. V. 9. Article No. 12232.
- Greibe T., Stenberg M., Wilson C. et al. // Phys. Rev. Lett. 2011. V. 106. № 9. Article No. 097001.
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