Квантово-химическое моделирование оптических и физико-химических свойств дифильных спиропиранов
- Authors: Селивантьев Ю.М.1,2, Морозов А.Н.1, Зайченко Н.Л.3, Любимов А.В.3, Райтман О.А.2
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Affiliations:
- РХТУ им. Д.И. Менделеева
- ИФХЭ РАН
- ФИЦ ХФ РАН
- Issue: Vol 60, No 3 (2024)
- Pages: 298-313
- Section: НОВЫЕ ВЕЩЕСТВА, МАТЕРИАЛЫ И ПОКРЫТИЯ
- URL: https://kld-journal.fedlab.ru/0044-1856/article/view/663882
- DOI: https://doi.org/10.31857/S0044185624030097
- EDN: https://elibrary.ru/MDRRMS
- ID: 663882
Cite item
Abstract
Метод TD-DFT впервые применен для расчета электронных переходов дифильных спиросоединений. Показано, что он дает принципиально верное распределение электронной плотности, соответствующее результатам, полученным с помощью метода CASSCF, и позволяет предсказать природу электронного перехода мероцианиновой формы. Для отрицательных фотохромов обнаружена возможность существования конических пересечений поверхностей потенциальной энергии основного и возбужденного электронных состояний, что может являться причиной замедленного фотохромизма данных соединений. Показана принципиальная возможность использования TD-DFT для предсказания оптических характеристик длинноцепочечных спиропиранов при условии использования шкалирующих регрессий. Впервые разработаны линейные регрессии для таких соединений, учитывающие набор физических параметров растворителя в явном виде. Это позволило получить унифицированную эмпирическую корректировку, учитывающую сольватохромный эффект. Полученные результаты могут быть использованы в качестве основы для разработки базового концепта, учитывающего влияние растворителя на спектральные свойства спиросоединений, и построения единой регрессионной модели, охватывающей различные проявления сольвато- и фотохромизма.
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About the authors
Ю. М. Селивантьев
РХТУ им. Д.И. Менделеева; ИФХЭ РАН
Email: raitman.o.a@muctr.ru
Russian Federation, Москва, Миусская пл. 9; Москва, Ленинский просп., 31, к. 4
А. Н. Морозов
РХТУ им. Д.И. Менделеева
Email: raitman.o.a@muctr.ru
Russian Federation, Москва, Миусская пл. 9
Н. Л. Зайченко
ФИЦ ХФ РАН
Email: raitman.o.a@muctr.ru
Russian Federation, Москва, ул. Косыгина, 4
А. В. Любимов
ФИЦ ХФ РАН
Email: raitman.o.a@muctr.ru
Russian Federation, Москва, ул. Косыгина, 4
О. А. Райтман
ИФХЭ РАН
Author for correspondence.
Email: raitman.o.a@muctr.ru
Russian Federation, Москва, Ленинский просп., 31, к. 4
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