Electron microscopy and electron energy loss spectroscopy of titanium nitride thin films in TiNx/La: HfO2 (Hf0.5Zr0.5O)/TiNx/SiO2

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Рұқсат ақылы немесе тек жазылушылар үшін

Аннотация

The structure and properties of TiNx electrodes obtained by plasma-enhanced atomic layer deposition in the 20 nm TiNx/10 nm La: HfO2(Hf0.5Zr0.5O)/20 nm TiNx/1 μm SiO2 system have been studied by electron microscopy and electron energy loss spectroscopy. It is shown that the electrode material has a TiNxOy composition, the band gap width varies within 1.7–2.5 eV, the resistivity is 208 μOm cm and the value of the temperature coefficient of resistance (20–100°C) is equal to –31.4 ⋅ 10–6 1/K.

Авторлар туралы

E. Suvorova

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
of the Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: suvorova@crys.ras.ru
Russia, 119333, Moscow

O. Uvarov

Prokhorov General Physics Institute of Russian Academy of Sciences

Email: suvorova@crys.ras.ru
Russia, 119991, Moscow

A. Klimenko

Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences

Email: suvorova@crys.ras.ru
Russia, 119991, Moscow

K. Chizh

Prokhorov General Physics Institute of Russian Academy of Sciences; Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences

Email: suvorova@crys.ras.ru
Russia, 119991, Moscow; Russia, 119991, Moscow

Әдебиет тізімі

  1. Müller J., Polakowski P., Polakowski S., Mikolajick T. // ECS J. Solid State Sci. Technol. 2015. V. 4. No. 5. P. N30.
  2. Park M.H., Lee Y.H., Mikolajick T. et al. // MRS Commun. 2018. V. 8. P. 795.
  3. Chernikova A.G., Kuzmichev D.S., Negrov D.V. et al. // Appl. Phys. Lett. 2016. V. 108. Art. No. 242905.
  4. Song G., Wang Y., Tan D.Q. // IET Nanodielectr. 2022. V. 5. P.1.
  5. Munde M.S., Mehonic A., Ng W.H. et al. // Sci. Reports. 2017. V. 7. Art. No. 9274.
  6. Suvorova E.I., Uvarov O.V., Chizh K.V. et al. // Nanomaterials. 2022. V. 12. Art. No. 3608.
  7. Abdallah I., Dupressoire C., Laffont L. et al. // Corros. Sci. 2019. V. 153. P. 191.
  8. Bertoni G., Beyers E., Verbeeck J. et al. // Ultramicroscopy. 2006. V. 106. P. 630.
  9. Matveyev Y., Negrov D., Chernikova A. et al. // ACS Appl. Mater. Interfaces. 2017. V. 9. No. 49. P. 43370.
  10. Agustin M.P., Fonseca L.R.C., Hooker J.C., Stemmer S. // Appl. Phys. Lett. 2005. V. 87. Art. No. 121909.
  11. Graciani J., Hamad S., Sanz J. Fdez // Phys. Rev. B. 2009. V. 80. Art. No. 184112.

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© Е.И. Суворова, О.В. Уваров, А.А. Клименко, К.В. Чиж, 2023