Dynamics of deposition and removal of a fluorocarbon film in the cyclic process of plasma-chemical etching of silicon

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Аннотация

In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure. For example, adjusting the etching time of the FCF improves the selectivity of the etching process.

Авторлар туралы

O. Morozov

Valiev Institute of Physics and Technology of the Russian Academy of Sciences, Yaroslavl Branch

Хат алмасуға жауапты Автор.
Email: moleg1967@yandex.ru
Ресей, Yaroslavl, 150007

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