PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the xCdxTe Topological Phase

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The PT-symmetric photoconductivity has been detected for the first time in microwave-irradiated heterostructures based on thick Hg1 − xCdxTe films with the CdTe content x corresponding to the topological phase although the magnetic field symmetry (T symmetry) and the symmetry in the positions of potential contact pairs (P symmetry) are not conserved separately. The microwave photoconductivity in similar heterostructures based on the trivial Hg1 − xCdxTe phase is both P- and T-symmetric.

作者简介

S. Chmyr'

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

A. Kazakov

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

A. Galeeva

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

D. Dolzhenko

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

A. Artamkin

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

A. Ikonnikov

Faculty of Physics, Moscow State University

Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

N. Mikhaylov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: khokhlov@mig.phys.msu.ru
630090, Novosibirsk, Russia

S. Dvoretskiy

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: khokhlov@mig.phys.msu.ru
630090, Novosibirsk, Russia

M. Bannikov

Lebedev Physical Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: khokhlov@mig.phys.msu.ru
119991, Moscow, Russia

参考

  1. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
  2. Y. Ando, J. Phys. Soc. Jpn. 82, 102001 (2013).
  3. O. Breunig and Y. Ando, Nat. Rev. Phys. 4, 184 (2022).
  4. H. Plank and S. D. Ganichev, Solid State Electronics 147, 44 (2018).
  5. K.-M. Dantscher, D. A. Kozlov, P. Olbrich, C. Zoth, P. Faltermeier, M. Lindner, G. V. Budkin, S. A. Tarasenko, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss, B. Jenichen, and S. D. Ganichev, Phys. Rev. B 92, 165314 (2015).
  6. K.-M. Dantscher, D. A. Kozlov, M. T. Scherr, S. Gebert, J. B¨arenf¨anger, M. V. Durnev, S. A. Tarasenko, V. V. Bel'kov, N. N. Mikhailov, S. A. Dvoretsky, Z. D. Kvon, J. Ziegler, D. Weiss, and S. D. Ganichev, Phys. Rev B 95, 201103 (2017).
  7. S. G. Egorova, V. I. Chernichkin, L. I. Ryabova, E. P. Skipetrov, L. V. Yashina, S. N. Danilov, S. D. Ganichev, and D. R. Khokhlov, Sci. Rep. 5, 11540 (2015).
  8. A. V. Galeeva, S. G. Egorova, V. I. Chernichkin, M. E. Tamm, L. V. Yashina, V. V.Rumyantsev, S. V. Morozov, H. Plank, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Semicond. Sci. Technol. 31, 095010 (2016).
  9. A. V. Galeeva, I. V. Krylov, K. A. Drozdov, A. F. Knjazev, A. V. Kochura, A. P. Kuzmenko, V. S. Zakhvalinskii, S. N. Danilov, L. I. Ryabova, and D. R. Khokhlov, Beilstein J. Nanotechnol. 8, 167 (2017).
  10. A. Rogalski, Rep. Prog. Phys. 68, 2267 (2005).
  11. M. Weiler, Semiconductors and semimetals, ed. by R. Willardson and A. Beer, Academic press, N.Y. (1981), v. 16, p. 119.
  12. M. Orlita, D. M. Basko, M. S. Zholudev, F. Teppe, W. Knap, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, P. Neugebauer, C. Faugeras, A.-L. Barra, G. Martinez, and M. Potemski, Nat. Phys. 10, 233 (2014).
  13. A. V. Galeeva, A. S. Kazakov, A. I. Artamkin, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 10, 2377 (2020).
  14. A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 1587 (2021).
  15. A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, and D. R. Khokhlov, Sci. Rep. 11, 11638 (2021).
  16. A. V. Galeeva, A. I. Artamkin, A. S. Kazakov, S. N. Danilov, S. A. Dvoretskiy, N. N. Mikhailov, L. I. Ryabova, and D. R. Khokhlov, Beilsten J. Nanotechnol. 9, 1035 (2018).
  17. K. K. Svitashev, S. A. Dvoretskiy, Y. G. Sidorov, V. A. Shvets, A. S. Mardezhov, I. E. Nis, V. S. Varavin, V. Liberman, and V. G. Remesnik, Crystal Research and Technology 29(7), 931 (1994).
  18. V. S. Varavin, S. A. Dvoretskiy, D. G. Ikusov, N. N. Mikhailov, V. G. Remesnik, G. Yu. Sidorov, Yu. G. Sidorov, P. N. Sizikov, and I. N. Uzhakov, Optoelectroncs, Instrumentation and Data Processing 49, 4 (2013).
  19. S. A. Dvoretsky, D. G. Ikusov, Z. D. Kvon, N. N. Mikhailov, V. G. Remesnik, R. N. Smirnov, Yu. G. Sidorov, and V. A. Shvets, Semiconductor Physics, Quantum Electronics & Optoelectronics 10, 47 (2007).

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