Topological Memory with Multiply-Connected Planar Magnetic Nanoelements

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详细

A coding scheme is introduced to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the specific examples are given for doubly- and triply-connected cases. The energy barriers, protecting the information-bearing states, are discussed. Compared to a set of disparate simply-connected nanoelements of the same total connectivity, the nanoelements with holes can hold much more information due to the possibility of linking the individual bits.

作者简介

K. Metlov

Donetsk Institute for Physics and Engineering;Institute for Numerical Mathematics, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: metlov@donfti.ru
Donetsk, 283048 Russia;Moscow, 119991 Russia

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