Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

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Abstract

Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns > 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.

About the authors

A. S. Gusev

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

A. O. Sultanov

National Research Nuclear University MEPhI

Author for correspondence.
Email: AOSultanov@mephi.ru
Russian Federation, Moscow

A. V. Katkov

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

S. M. Ryndya

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

N. V. Siglovaya

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

A. N. Klochkov

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

R. V. Ryzhuk

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

N. I. Kargin

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

D. P. Borisenko

National Research Nuclear University MEPhI

Email: AOSultanov@mephi.ru
Russian Federation, Moscow

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