Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier

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Аннотация

Impact of the depth of a quantum barrier in the form of a tunnel-thin charge-depletion carbon layer in the enriched noncrystalline carbon template on non-dissipative transport and field electron emission has been studied. It has been shown that cross-current nonlinearities in current variables in heterostructures with static low-field electric effects and current-voltage curve parameters of the field electron emission in the strong pulse electric fields with microsecond duration are determined by the parameters of quantum barrier and by the implementation of resonant tunneling conditions with different zero levels of size quantization energy.

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Авторлар туралы

G. Krasnikov

Joint-Stock Company “Scientific-Research Institute of Molecular Electronics”

Email: vbokarev@niime.ru
Ресей, Zelenograd

V. Bokarev

Joint-Stock Company “Scientific-Research Institute of Molecular Electronics”

Хат алмасуға жауапты Автор.
Email: vbokarev@niime.ru
Ресей, Zelenograd

G. Teplov

Joint-Stock Company “Scientific-Research Institute of Molecular Electronics”

Email: vbokarev@niime.ru
Ресей, Zelenograd

R. Yafarov

Saratov branch-office of the Kotelnikov V. A. Institute for Radiotechnics and Electronics of the Russian Academy of Sciences

Email: pirpc@yandex.ru
Ресей, Saratov

Әдебиет тізімі

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2. Fig. 1. Dependences of transverse currents (a) and their differences (b) on the thickness of the depletion layer of two-layer heterostructures with reverse (1) and forward (2) connections of the power source.

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3. Fig. 2. I-V characteristics (a) and transverse currents (b) at voltages of 30 (1) and 50 V (2) in three-layer heterostructures with different thicknesses of depletion layers, nm: 1 – 5; 2 – 10; 3 – 15; 4 – 20; 5 – 0.

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4. Fig. 3. Field-voltage characteristics of two (a) and three-layer (b) heterostructures depending on the thickness of the depletion layer, nm: 1 – 5; 2 – 10; 3 – 15; 4 – 0.

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5. Fig. 4. Dependences of field current densities (1), emission activation thresholds (2) (a), slope of the current-voltage characteristic (1) and intervals of permissible electric field strengths (2) (b) on the thickness of the depletion layers of two-layer heterostructures.

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6. Fig. 5. Dependences of field current densities (1), emission activation thresholds (2) (a), I-V characteristic steepness (1) and intervals of permissible electric field strengths (2) (b) on the thickness of depletion layers of three-layer heterostructures.

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