Phase Equilibria in the Al–Ga–As–Bi System at 900°C

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Abstract

Solidus and liquidus isotherms in the Al–Ga–As–Bi system have been modeled for an initial epitaxy temperature of 900°C, which is needed for growing relatively thick (50–100 μm) compositionally graded AlxGa1–xAs layers. The theoretical isotherms have been confirmed by experimental data. It has been shown that, to grow relatively thick (>50 μm) AlGaAs layers, it is reasonable to use Ga–Bi mixed melts containing no more than 20 at % bismuth.

About the authors

V. P. Khvostikov

Ioffe Institute

Email: vlkhv@scell.ioffe.ru
194021, St. Petersburg, Russia

O. A. Khvostikova

Ioffe Institute

Email: vlkhv@scell.ioffe.ru
194021, St. Petersburg, Russia

N. S. Potapovich

Ioffe Institute

Email: vlkhv@scell.ioffe.ru
194021, St. Petersburg, Russia

A. S. Vlasov

Ioffe Institute

Author for correspondence.
Email: vlkhv@scell.ioffe.ru
194021, St. Petersburg, Russia

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Copyright (c) 2023 В.П. Хвостиков, О.А. Хвостикова, Н.С. Потапович, А.С. Власов