Gallium selenide thin films grown on silicon by plasma-enhanced chemical vapor deposition

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Gallium selenide (GaSe) thin films on silicon (111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.

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作者简介

M. Kudryashov

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

编辑信件的主要联系方式.
Email: mikhail.kudryashov1986@yandex.ru
俄罗斯联邦, Nizhny Novgorod; Nizhny Novgorod

L. Mochalov

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
俄罗斯联邦, Nizhny Novgorod; Nizhny Novgorod

Y. Kudryashova

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
俄罗斯联邦, Nizhny Novgorod; Nizhny Novgorod

E. Slapovskaya

Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
俄罗斯联邦, Nizhny Novgorod

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2. Fig. 1. Schematic representation of a plasma-chemical installation for the synthesis of thin GaSe films.

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3. Fig. 2. Emission spectra of Ar–Se (1), Ar–Ga (2) and Ar–Ga–Se (3) mixtures.

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4. Fig. 3. Map of the distribution of elemental gallium and selenium on the surface of a film deposited on silicon at a plasma power of 50 W.

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5. Fig. 4. Diffraction patterns of gallium selenide films deposited at different plasma power values.

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6. Fig. 5. SEM images of gallium selenide films deposited at different plasma powers: 30 (a), 50 (b) and 70 W (c). Scale bar 200 nm.

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