Processes in the electronic system of solid solutions of bismuth and antimony telluride in the range of observation of the anomalous temperature dependence of the Hall coefficient

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Abstract

The temperature dependences of electrical conductivity and Hall coefficient in single crystals of bismuth and antimony telluride have been studied. In samples with a high content of antimony telluride, a decrease in Hall mobility in the region of nitrogen temperatures was found, which indicates the presence of an additional mechanism for charge carrier scattering.

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About the authors

N. P. Stepanov

Transbaikal State University; Baikal State University

Author for correspondence.
Email: np-stepanov@mail.ru
Russian Federation, Chita; Irkutsk

M. S. Ivanov

Irkutsk State Transport University

Email: np-stepanov@mail.ru

Transbaikal Institute of Railway Transport

Russian Federation, Chita

References

  1. Meroz O., Elkabets N., Gelbstein Y. // ACS Appl. Energy Mater. 2020. V. 3. P. 2090.
  2. Zheng Y., Xie H., Zhang Q. et al. // ACS Appl. Mater. Interfaces. 2020. V. 12. P. 36186.
  3. Zhang J., Feng X., Xu Y. et al. // Phys. Rev. B. 2015. V. 91. Art. No. 075431.
  4. Лукьянова Л.Н., Бойков Ю.А., Усов О.А. и др. // ФТП. 2017.Т.51. № 7. С. 880; Lukyanova L.N., Boikov Y.A., Usov O.A. et al. // Semiconductors. 2017. V. 51. No. 7. Р. 843.
  5. Tang X., Li Z., Liu W. et al. // Interdisc. Mater. 2022. V. 1. No. 1. P. 88.
  6. Павлов Д.П., Чибирев А.О., Салихов Т.М., Мамин Р.Ф. // Изв. РАН. Сер. физ. 2023. Т. 87. № 9. С. 1296; Pavlov D.P., Chibirev A.O., Salikhov T.M., Mamin R.F. // Bull. Russ. Acad. Sci. Phys. 2023. V. 87. No. 9. P. 1332.
  7. Bulat L.P., Drabkin I.A., Osvenskii V.B. et al. // J. Electron. Mater. 2015. V. 44. P. 1846.
  8. Жежу М., Васильев А.Е., Иванов О.Н. // Изв. РАН. Сер. физ. 2023. Т. 87. № 6. С. 786; Zhezhu M., Vasil’ev A.E., Ivanov O.N. // Bull. Russ. Acad. Sci. Phys. 2023. V. 87. No. 6. P. 692.
  9. Xu Y., Gan Z., Zhang S.C. // Phys. Rev. Lett. 2014. V. 112. No. 22. P. 226801.
  10. Чистяков В.В., Доможирова А.Н., Хуанг Дж.Ч.Э. и др. // Изв. РАН. Сер. физ. 2019. Т. 83. № 7. С. 921; Chistyakov V.V., Domozhirova A.N., Huang J.C. et al. // Bull. Russ. Acad. Sci. Phys. 2019. V. 83. No. 7. P. 838.
  11. Степанов Н.П., Иванов М.С. // ФТП. 2022. Т. 56. № 12. С. 1103; Stepanov N.P., Ivanov M.S. // Semiconductors. 2022. V. 56. No. 12. Р. 879.
  12. Yates B. // J. Electr. Control. 1959. V.6. P. 26.
  13. Житинская М.К., Немов С.А., Свечникова Т.Е. // ФТТ. 1998. Т. 40. № 8. С. 1428; Zhitinskaya M.K., Nemov S.A., Svechnikova T.E. // Phys. Solid State. 1998. V. 40. No. 8. P. 1297.
  14. Mase S. // J. Phys. Soc. 1957. V. 13. P. 434.
  15. Степанов Н.П., Гильфанов А.К., Трубицына Е.Н. // ФТП. 2019. Т. 53. № 6. С. 774; Stepanov N.P., Gilfanov A.K., Trubitsyna E.N. // Semiconductors. 2019. V. 53. No. 6. Р. 765.
  16. Сологуб В.В., Голецкая А.Д., Парфеньев Р.В. // ФТТ. 1972. Т. 14. № 3. С. 915.
  17. Степанов Н.П. // Опт. и спектроск. 2023. Т. 131. № 9. С. 1219.
  18. Vedernikov M.V., Konstantinov P.P., Burkov A.T. // Proc. 8th Int. Conf. Thermoelectric energy conversion (Nancy, 1989). Р. 45.
  19. Гольцман Б.М., Кудинов В.А., Смирнов И.А. Полупроводниковые термоэлектрические материалы на основе Вi2Te3. М.: Наука, 1972. 320 с.
  20. Testardi L.R., Bierly J.N., Danahoe F.J. // J. Phys. Chem. Sol. 1962. V. 23. P. 1209.
  21. Ансельм А.И. Введение в теорию полупроводников. СПб.: Лань, 2008. 618 с.
  22. Tussing P., Rosental W., Hang A. // Phys. Stat. Sol. B. 1972. V. 52. No. 2. Р. 451.

Supplementary files

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2. Fig. 1. Temperature dependences of the specific electrical conductivity of crystals: 1 – Bi2Te3; 2 – Bi1.5Sb0.5Te3; 3 – Bi1.2Sb0.8Te3; 4 – Bi0.8Sb1.2Te3; 5 – Bi0.4Sb1.6Te3; 6 – Bi0.01Sb1.99Te3.

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3. Fig. 2. Temperature dependences of the Hall coefficient of crystals: 1 – Bi2Te3; 2 – Bi1.5Sb0.5Te3; 3 – Bi1.2Sb0.8Te3; 4 – Bi0.8Sb1.2Te3; 5 – Bi0.4Sb1.6Te3; 6 – Bi0.01Sb1.99Te3; 7 – Bi1.8Sb0.2Te3.

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4. Fig. 3. Temperature dependences of the Hall mobility of crystals: 1 – Bi2Te3; 2 – Bi1.5Sb0.5Te3; 3 – Bi1.2Sb0.8Te3; 4 – Bi0.8Sb1.2Te3; 5 – Bi0.4Sb1.6Te3; 6 – Bi0.01Sb1.99Te3.

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5. Fig. 4. Temperature dependence of the Hall mobility taking into account scattering on acoustic phonons for the Bi2Te3 crystal (a) and the Bi0.6Sb1.4Te3 crystal (b): curve 1 – theoretical calculation τ ~ T–1; curve 2 – experimental dependence.

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