Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium

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Abstract

The kinetics of interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide was experimentally studied. It was established that in the studied range of conditions, complete decomposition of the original difluorodichloromethane molecule to atomic carbon occurs. It has been confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It has been shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in surface cleaning. The emission spectra of plasma radiation in the presence of a gallium arsenide semiconductor wafer are analyzed. Control lines and stripes were selected to control the speed of the etching process based on the emission intensity of the lines and stripes of the etching products.

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About the authors

D. B. Murin

Ivanovo State Chemical-Technological University

Author for correspondence.
Email: dim86@mail.ru
Russian Federation, Ivanovo

I. A. Chesnokov

Ivanovo State Chemical-Technological University

Email: dim86@mail.ru
Russian Federation, Ivanovo

I. A. Gogulev

Ivanovo State Chemical-Technological University

Email: dim86@mail.ru
Russian Federation, Ivanovo

A. L. Anokhin

Ivanovo State Chemical-Technological University

Email: dim86@mail.ru
Russian Federation, Ivanovo

A. E. Moloskin

Ivanovo State Chemical-Technological University

Email: dim86@mail.ru
Russian Federation, Ivanovo

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2. Fig. 1. Emission spectrum of RF discharge of CCl2F2-He mixture at gallium arsenide etching (W = 1150 W, Udc = -200 V, mixture composition 90/10%, total gas pressure 2.4 mTor, λ = 200÷480 nm)

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3. Fig. 2. Total emission spectrum of RF discharge of CCl2F2-He mixture during gallium arsenide etching (W = 1150 W, Udc = -200, mixture composition 90/10%, total gas pressure 2.4 mTor, λ = 200÷1000 nm)

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4. Fig. 3. Dependence of the emission intensity on the inserted power, CCl2F2-He mixture (W=1150 W, Udc = -200 V, mixture composition 50/50%, total gas pressure 2.4 mTor)

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5. Fig. 4. Dependence of radiation intensity on gas pressure, CCl2F2-He mixture (W = 1150 W, Udc = -200 V, mixture composition 50/50%, total gas pressure 2.4 mTor)

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6. Fig. 5. Dependence of mass loss on etching time, CCl2F2-He mixture (W = 1150 W, T = 100 ºC, mixture composition 50/50%, total gas pressure 2.4 mTor)

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7. Fig. 6. Dependences: 1 - etching rate of gallium arsenide on gas pressure, 2 - emission intensity of Ga atoms line (417 nm) on gas pressure, CCl2F2-He mixture (Udc = -200 V, T = 100°C, ttrav = 5 min, mixture composition 50/50%, total gas pressure 2.4 mTor)

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