| Шығарылым |
Атауы |
Файл |
| Том 53, № 6 (2024) |
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |
(Rus)
|
|
Efremov A., Betelin V., Kwon K.
|
| Том 53, № 6 (2024) |
Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |
(Rus)
|
|
Kerimov E.
|
| Том 53, № 5 (2024) |
Producing of graphene: deposition and annealing |
(Rus)
|
|
Shustin Е.
|
| Том 53, № 4 (2024) |
Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |
(Rus)
|
|
Kerimov E.
|
| Том 53, № 4 (2024) |
Al Islands on Si(111): Growth Temperature, Morphology and Strain |
(Rus)
|
|
Lomov A., Zakharov D., Tarasov M., Chekushkin A., Tatarintsev A., Vasiliev A.
|
| Том 53, № 4 (2024) |
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |
(Rus)
|
|
Murin D., Chesnokov I., Gogulev I., Anokhin A., Moloskin A.
|
| Том 53, № 2 (2024) |
Ripple of a DC/DC converter based on SEPIC topology |
(Rus)
|
|
Bityukov V., Lavrenov A.
|
| Том 53, № 2 (2024) |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
(Rus)
|
|
Kenzhaev Z., Zikrillaev N., Odzhaev V., Ismailov K., Prosolovich V., Zikrillaev K., Koveshnikov S.
|
| Том 53, № 2 (2024) |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
(Rus)
|
|
Khamzin E., Uslin D.
|
| Том 53, № 1 (2024) |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
(Rus)
|
|
Gorlachev E., Mordvintsev V., Kudryavtsev S.
|
| Том 53, № 1 (2024) |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
(Rus)
|
|
Ezhovskii Y., Mikhailovskii S.
|
| Том 53, № 1 (2024) |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
(Rus)
|
|
Miakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
|
| Том 53, № 1 (2024) |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
(Rus)
|
|
Rogozhin A., Glaz O.
|
| Том 53, № 1 (2024) |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
(Rus)
|
|
Gaidukasov R., Miakonkikh A.
|
| Том 52, № 5 (2023) |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
(Rus)
|
|
Mordvintsev V., Kudryavtsev S., Naumov V., Gorlachev E.
|
| Том 52, № 4 (2023) |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
(Rus)
|
|
Saenko A., Vakulov Z., Klimin V., Bilyk G., Malyukov S.
|
| Том 52, № 4 (2023) |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
(Rus)
|
|
Fadeev A., Myakon’kikh A., Smirnova E., Simakin S., Rudenko K.
|
| Том 52, № 3 (2023) |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
(Rus)
|
|
Polushkin E., Nefed’ev S., Koval’chuk A., Soltanovich O., Shapoval S.
|
| Нәтижелер 18 - 1/18 |
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