Producing of graphene: deposition and annealing

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Abstract

The review is devoted to the analysis of the role of high -temperature annealing as a technological procedure in technologies for obtaining graphene films and creating structures for nanoelectronics based on them. As is well known, one of the ways to obtain graphene is a high -temperature annealing of the SIC single crystals. This method allows you to obtain high quality graphene films, but the significant disadvantages of this method are the high annealing temperature, which creates serious problems of sampling pollution, and the small sizes of monocrystalline domains of the resulting graphene. The method of obtaining graphene by annealing structures with solid carbon layers deposited onto the nickel film on the dielectric substrate was widespread. In this case, grafene is obtained between a nickel film and a substrate. The annealing of graphene films, regardless of the method of their obtaining, is a means of cleaning the surface of graphene from adsorbed pollution and improving its crystalline structure. It was revealed that annealing can lead to different results for isolated graphene films and for graphene structures used in nanoelectronics devices.

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About the authors

Е. G. Shustin

V.A. Kotelnikov Institute of Radio Engineering a. Electrioncs

Author for correspondence.
Email: shustin2005@ya.ru

Fryazino branch

Russian Federation

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Supplementary files

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2. Fig. 1. Raman spectra of the Al2O3/HOPG structure.

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3. Fig. 2. Scheme of obtaining graphene by annealing.

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